Title :
Pd surface modification of SnO2-based nanorod arrays for H2 gas sensors
Author :
Huang, Hui ; Lee, Y.C. ; Chow, C.L. ; Ong, C.Y. ; Tse, M.S. ; Tan, O.K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
In this work, SnO2 nanorod arrays have been deposited by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) without any high temperature treatment or additional catalysis. The SnO2 nanorods are connected at the root with a very thin seed layer on the substrate. The SnO2 nanorods have a spatial distribution density of 350 mum-2 and large surface area of around 108 m2/g. Pd was chemically modified on surface of the SnO2 nanorods by spin coating. The sensitivity of the SnO2 nanorod arrays increased around 4 times after doping with 1 layer of Pd, but decreased continuously with increasing Pd layers. The effect of the annealing temperature on the sensing properties was also studied and it was found that annealing at 500degC is enough to achieve better performance of the Pd-doped SnO2 nanorod array sensor.
Keywords :
annealing; gas sensors; hydrogen; nanostructured materials; palladium; plasma CVD; semiconductor doping; semiconductor materials; spin coating; surface chemistry; surface treatment; tin compounds; H2; PECVD; SnO2:Pd; annealing; chemical surface modification; doping; gas sensors; inductively coupled plasma-enhanced chemical vapor deposition; nanorod arrays; spin coating; temperature 500 C; Annealing; Chemical vapor deposition; Coatings; Doping; Plasma chemistry; Plasma density; Plasma temperature; Sensor arrays; Surface treatment; Temperature sensors;
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2008.4716396