Title :
Ultrafast all-optical switching using near-infrared inter-subband transition in an InGaAs/AlAs/AlAsSb/InP quantum well structure
Author :
Yoshida, H. ; Mozume, T. ; Georgiev, N. ; Gopal, A.V. ; Simoyama, T. ; Ishikawa, H.
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Ibaraki, Japan
Abstract :
Picosecond and subpicosecond all-optical switching using near-infrared intersubband transitions was demonstrated in an InGaAs/AlAs/AlAsSb quantum well structure. For a multiple quantum well structure, strong absorption at wavelengths shorter than 1.7 μm was obtained. An inter-subband-pump and inter-band-probe measurement was performed on this material system using a femtosecond optical parametric amplifier system and white-light generation. Inter- and intra-subband relaxation was observed by measuring the time-wavelength resolved interband absorption induced by intersubband excitation. The present results demonstrate its applicability for ultrafast, highly efficient, all-optical modulators and switches.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; multiplexing equipment; optical communication equipment; optical modulation; optical parametric amplifiers; quantum well devices; time division multiplexing; 1.7 micron; InGaAs-AlAs-AlAsSb-InP; InGaAs/AlAs/AlAsSb/InP; all-optical modulators; femtosecond optical parametric amplifier system; inter-band-probe measurement; inter-subband-pump; intersubband excitation; near-infrared inter-subband transition; quantum well structure; time-wavelength resolved interband absorption; ultrafast all-optical switching; white-light generation; Absorption; Indium gallium arsenide; Indium phosphide; Nonlinear optics; Optical materials; Optical modulation; Performance evaluation; Stimulated emission; Ultrafast optics; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014610