DocumentCode
1893063
Title
Plasma charging damage - where do we stand?
Author
Cheung, Kin P.
Author_Institution
Electr. & Comput. Eng., Rutgers Univ., New Brunswick, NJ, USA
fYear
2005
fDate
9-11 May 2005
Firstpage
83
Lastpage
86
Abstract
A few years ago, plasma charging damage was a serious yield and reliability problem in the silicon integrated circuit (IC) industry. Recently, its importance appears to diminish as technology continues to advance. In this paper, we take a closer look at this trend and discuss the reason behind it. Clearly, the opportunity to introduce plasma charging damage is increasing as technology evolves.
Keywords
integrated circuit reliability; integrated circuit yield; plasma density; plasma materials processing; integrated circuit reliability; integrated circuit yield; plasma charging damage; silicon integrated circuit industry; Degradation; Electric breakdown; Electrons; Impact ionization; Integrated circuit technology; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN
0-7803-9081-4
Type
conf
DOI
10.1109/ICICDT.2005.1502598
Filename
1502598
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