• DocumentCode
    1893089
  • Title

    Charging damage and SOI

  • Author

    Hook, Terence B.

  • Author_Institution
    IBM Microelectron., Essex Junction, VT, USA
  • fYear
    2005
  • fDate
    9-11 May 2005
  • Firstpage
    87
  • Lastpage
    90
  • Abstract
    SOI technologies offer the highest possible performance in today´s silicon spectrum, and are used for the very fastest processor requirements. In addition to the high speed achievable with this technology, there is also unusually high robustness against inline charging damage. In this paper, we review data and theories pertinent to SOI charging immunity and design rules.
  • Keywords
    silicon-on-insulator; SOI charging immunity; SOI technologies; charging damage; processor requirements; silicon spectrum; silicon-on-insulator; Conductors; Degradation; Diodes; Microelectronics; Plasmas; Robustness; Shape; Silicon; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
  • Print_ISBN
    0-7803-9081-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2005.1502599
  • Filename
    1502599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1893089