Title :
Room temperature operation of TlInGaAs/InP DH laser diodes
Author :
Asahi, H. ; Lee, H.-J. ; Mizobata, A. ; Fujiwara, A. ; Gonda, S.
Author_Institution :
ISIR, Osaka Univ., Ibaraki, Japan
Abstract :
Tl-containing III-V semiconductors are expected to fabricate the temperature-insensitive wavelength laser diodes (LDs), which are important to effectively use light wavelength sources, especially in the WDM optical fiber communication systems. TlInGaAs/InP DH structures were grown by gas source MBE. Small temperature variation of electroluminescence emission peak wavelength was observed. TlInGaAs/InP DH LDs were fabricated and observed the first successful laser operation at room temperature. The threshold current density was about 5 kA/cm2 under pulsed operation and the T0 value was 85 K.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electroluminescence; gallium arsenide; indium compounds; semiconductor lasers; thallium compounds; III-V semiconductor; TlInGaAs-InP; TlInGaAs/InP DH laser diode; characteristic temperature; electroluminescence; gas source MBE growth; pulsed operation; room temperature operation; threshold current density; DH-HEMTs; Diode lasers; Electroluminescence; Fiber lasers; Gas lasers; III-V semiconductor materials; Indium phosphide; Optical fiber communication; Temperature; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014615
