Efficient, narrow linewidth emission from InGaAs/AlGaAs V-groove quantum wire light-emitting diodes

We have succeeded to achieve highly efficient, narrow linewidth electroluminescence (EL) at room temperature from strained InGaAs quantum wire (QWR) light-emitting diodes (LEDs). The internal quantum efficiency is estimated to be as high as 60% for a single layer, 500-nm-pitch V-groove In_0.15Ga_0.85As QWR array LED, emitting at 1.29 eV (λ = 960 nm) with a linewidth as narrow as 14 meV. The high efficiency is achieved with the aid of selective carrier injection directly into the QWRs through self-ordered AlGaAs vertical quantum wells (VQWs), where the VQWs were separated from the InGaAs QWRs by thin GaAs spacer layers in order to reduce nonradiative recombination and inhomogeneous alloy broadening.