• DocumentCode
    1893316
  • Title

    The coupling of an N-well CMOS fabrication laboratory course with the SEMATECH Center of Excellence in Multilevel Metallization at Rensselaer

  • Author

    Price, David T. ; Gutmann, Ronald I. ; Haley, Norman J. ; Muraka, S.P. ; Saxena, Arjun N. ; Chow, T. Paul ; Ramkumar, K. ; Lakshminarayanan, S. ; Bhalla, Anup

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    1993
  • fDate
    18-19 May 1993
  • Firstpage
    183
  • Lastpage
    187
  • Abstract
    The Center for Integrated Electronics (CIE) at Rensselaer Polytechnic Institute is utilizing front-end processing, developed for, and performed in, a CMOS fabrication laboratory course as a foundry service for back-end of the line search. The goal of the fabrication laboratory course is to expose students to the fabrication of 2-micron CMOS integrated circuits through first level metallization and electrical testing. The SEMATECH Center of Excellence (SCOE) on Multilevel Metallization at Rensselaer is primarily focused on back-end of the line unit process research and has added an important task on process integration. The mask design and process steps used for both the course and SCOE research are outlined
  • Keywords
    CMOS integrated circuits; educational courses; integrated circuit technology; integrated circuit testing; laboratory apparatus and techniques; masks; metallisation; CMOS integrated circuits; N-well CMOS fabrication laboratory course; SEMATECH; electrical testing; first level metallization; foundry service; mask design; multilevel metallisation; process integration; CMOS process; CMOS technology; Circuit testing; Cobalt; Copper; Fabrication; Laboratories; Lithography; Metallization; Silicides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
  • Conference_Location
    Research Triangle Park, NC
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-0990-1
  • Type

    conf

  • DOI
    10.1109/UGIM.1993.297010
  • Filename
    297010