Title :
State of the art of InP and GaAs quantum cascade lasers
Author :
Scamarcio, G. ; Spagnolo, V. ; Troccoli, M. ; Zanolli, Z. ; Rizzi, F. ; Vitiello, M. ; Marano, D. ; Sabato, A. ; Catalano, I.M. ; Sibilano, M. ; Calabrese, P.
Author_Institution :
Dept. Phys., Bari Univ., Italy
Abstract :
The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements.
Keywords :
III-V semiconductors; electron-phonon interactions; gallium arsenide; hot carriers; indium compounds; quantum well lasers; thermal resistance; GaAs-AlGaAs; GaAs/AlGaAs heterostructure; InP-GaInAs-AlInAs; InP/GaInAs/AlInAs heterostructure; high-energy injection; high-power superlattice laser; hot electron energy distribution; hot phonon effect; long-wavelength infrared emission; micro-probe Raman measurement; micro-probe luminescence measurement; quantum cascade laser; temperature distribution; thermal resistance; tunnel injection; Electrical resistance measurement; Gallium arsenide; Indium phosphide; Laser theory; Luminescence; Monitoring; Quantum cascade lasers; Superlattices; Temperature distribution; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014626
