DocumentCode
1893483
Title
Hot peripheral thermal management to mitigate cache temperature variation
Author
Homayoun, Houman ; Rahmatian, Mehryar ; Kontorinis, Vasileios ; Golshan, Shahin ; Tullsen, Dean M.
Author_Institution
Dept. of Comput. Sci. & Eng., Univ. of California, San Diego, CA, USA
fYear
2012
fDate
19-21 March 2012
Firstpage
755
Lastpage
763
Abstract
Modern microprocessor caches are often regarded as cool chip components that dissipate power uniformly. This research demonstrates that this uniformity is a misconception. Memory cell peripherals dissipate considerably higher power than the actual memory cell and this can result in up to 30°C of temperature difference between the warmest and the coolest part of the cache. To be effective and accurate, cache temperature and power modeling and management must take this effect into account. Further, this paper focuses on the surrounding logic of the memory cell and applies two novel techniques, peripheral bit swapping (PBS) and peripheral monitor and shutdown (PMSD), to reduce the thermal variation as well as reduce the corresponding steady-state temperature and leakage power of the cache. Overall, these techniques decrease temperature by 8°C for the L1 Data Cache and 5°C for the shared L2 cache and reduce their thermal gradient by more than 75%, on average.
Keywords
SRAM chips; cache storage; logic circuits; microprocessor chips; thermal management (packaging); PBS; PMSD; T1 data cache; cache leakage power; cache temperature; cache temperature variation mitigation; chip component; hot peripheral thermal management; logic cell; memory cell peripheral dissipation; microprocessor cache; peripheral bit swapping; peripheral monitor and shutdown; power dissipation; power management; power modeling; shared T2 cache; steady-state temperature; temperature 5 degC; temperature 8 degC; temperature difference; thermal gradient reduction; thermal variation reduction; Arrays; Delay; Multiplexing; Random access memory; Switching circuits; Transistors; Cache; Peripheral Circuits; Processor; Temperature; Thermal Management;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2012 13th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-4673-1034-5
Type
conf
DOI
10.1109/ISQED.2012.6187576
Filename
6187576
Link To Document