• DocumentCode
    1893483
  • Title

    Hot peripheral thermal management to mitigate cache temperature variation

  • Author

    Homayoun, Houman ; Rahmatian, Mehryar ; Kontorinis, Vasileios ; Golshan, Shahin ; Tullsen, Dean M.

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Univ. of California, San Diego, CA, USA
  • fYear
    2012
  • fDate
    19-21 March 2012
  • Firstpage
    755
  • Lastpage
    763
  • Abstract
    Modern microprocessor caches are often regarded as cool chip components that dissipate power uniformly. This research demonstrates that this uniformity is a misconception. Memory cell peripherals dissipate considerably higher power than the actual memory cell and this can result in up to 30°C of temperature difference between the warmest and the coolest part of the cache. To be effective and accurate, cache temperature and power modeling and management must take this effect into account. Further, this paper focuses on the surrounding logic of the memory cell and applies two novel techniques, peripheral bit swapping (PBS) and peripheral monitor and shutdown (PMSD), to reduce the thermal variation as well as reduce the corresponding steady-state temperature and leakage power of the cache. Overall, these techniques decrease temperature by 8°C for the L1 Data Cache and 5°C for the shared L2 cache and reduce their thermal gradient by more than 75%, on average.
  • Keywords
    SRAM chips; cache storage; logic circuits; microprocessor chips; thermal management (packaging); PBS; PMSD; T1 data cache; cache leakage power; cache temperature; cache temperature variation mitigation; chip component; hot peripheral thermal management; logic cell; memory cell peripheral dissipation; microprocessor cache; peripheral bit swapping; peripheral monitor and shutdown; power dissipation; power management; power modeling; shared T2 cache; steady-state temperature; temperature 5 degC; temperature 8 degC; temperature difference; thermal gradient reduction; thermal variation reduction; Arrays; Delay; Multiplexing; Random access memory; Switching circuits; Transistors; Cache; Peripheral Circuits; Processor; Temperature; Thermal Management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2012 13th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-1034-5
  • Type

    conf

  • DOI
    10.1109/ISQED.2012.6187576
  • Filename
    6187576