DocumentCode :
1893495
Title :
Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the λ = 2-2.5 μm range
Author :
Cerutti, L. ; Garnache, A. ; Genty, F. ; Alibert, C. ; Romanini, D. ; Picard, E.
Author_Institution :
CEM2, Univ. Montpellier 2, France
fYear :
2002
fDate :
2002
Firstpage :
739
Lastpage :
742
Abstract :
Here we demonstrate a low-threshold efficient type-I quantum-well GaSb-based vertical-cavity-surface-emitting-laser (VCSEL) operating near 2.2 μm in the continuous-wave (CW) regime up to ∼220 K, with a low divergence circular beam. The structure is optically-pumped by a commercial 830 nm diode laser.
Keywords :
III-V semiconductors; gallium compounds; optical pumping; quantum well lasers; surface emitting lasers; 2 to 2.5 micron; 220 K; CW operation; GaSb; circular beam divergence; optical pumping; type-I quantum-well GaSb VCSEL; Quantum wells; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014628
Filename :
1014628
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1893495
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