Title :
A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm
Author :
Pérona, A. ; Rouillard, Y. ; Salhi, A. ; Grech, P. ; Chevrier, F. ; Yarekha, D.A. ; Garnache, A. ; Baranov, A.N. ; Alibert, C.
Author_Institution :
Centre d´´Electronique et de Microoptoelectronique de Montpellier, Univ. de Montpellier II, France
Abstract :
We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm-1 have been found. The system is able to reach threshold current densities as low as 63 A/cm2 per well for a cavity length of 1200 μm. This is, to our knowledge, the best reported value at 2.26 μm.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; spontaneous emission; thermal resistance; waveguide lasers; 1200 micron; 2.26 micron; AlGaAsSb-GaInAsSb; AlGaAsSb/GaInAsSb quantum well laser; GaSb:Te; [100] oriented GaSb:Te substrates; cavity length; edge-emitting semiconductor laser; external quantum efficiency; internal losses; internal quantum efficiency; molecular beam epitaxy; ridge waveguide diodes; spontaneous emission spectra; thermal resistance; threshold current densities; Diodes; Gas lasers; Lattices; Molecular beam epitaxial growth; Power lasers; Semiconductor lasers; Spontaneous emission; Tellurium; Temperature; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014630
