A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm

Author

Pérona, A. ; Rouillard, Y. ; Salhi, A. ; Grech, P. ; Chevrier, F. ; Yarekha, D.A. ; Garnache, A. ; Baranov, A.N. ; Alibert, C.

Author_Institution

Centre d´´Electronique et de Microoptoelectronique de Montpellier, Univ. de Montpellier II, France

fYear

2002

fDate

2002

Firstpage

743

Lastpage

745

Abstract

We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm^-1 have been found. The system is able to reach threshold current densities as low as 63 A/cm² per well for a cavity length of 1200 μm. This is, to our knowledge, the best reported value at 2.26 μm.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; spontaneous emission; thermal resistance; waveguide lasers; 1200 micron; 2.26 micron; AlGaAsSb-GaInAsSb; AlGaAsSb/GaInAsSb quantum well laser; GaSb:Te; [100] oriented GaSb:Te substrates; cavity length; edge-emitting semiconductor laser; external quantum efficiency; internal losses; internal quantum efficiency; molecular beam epitaxy; ridge waveguide diodes; spontaneous emission spectra; thermal resistance; threshold current densities; Diodes; Gas lasers; Lattices; Molecular beam epitaxial growth; Power lasers; Semiconductor lasers; Spontaneous emission; Tellurium; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014630

Filename

1014630