DocumentCode
1893595
Title
Self-excited Raman scattering by intersubband transition in AlGaInP/InGaP quantum well lasers at 300 K
Author
Susaki, W. ; Uetsuji, T. ; Nishikawa, K. ; Gao, X. ; Ohno, N. ; Yagi, T. ; Oomura, E.
Author_Institution
Osaka Electro-Commun. Univ., Neyagawa, Japan
fYear
2002
fDate
2002
Firstpage
747
Lastpage
749
Abstract
Efficient self-excited electron and phonon Raman scattering spectra are observed above threshold in 0.68μm-AlGaInP/InGaP quantum well lasers at room temperature. They are assigned to electron intersubband transitions between the first and the second subbands in the quantum well accompanied with longitudinal optical phonon scattering
Keywords
III-V semiconductors; Raman spectra; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; semiconductor plasma; 0.68 micron; 300 K; AlGaInP-InGaP; AlGaInP/InGaP; Raman scattering spectra; electron intersubband transitions; electron-hole plasma; longitudinal optical phonon scattering; quantum well lasers; self-excited Raman scattering; Electron optics; Laser transitions; Optical scattering; Particle scattering; Phonons; Plasma temperature; Polarization; Quantum well lasers; Raman scattering; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location
Stockholm
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014631
Filename
1014631
Link To Document