Title :
Self-excited Raman scattering by intersubband transition in AlGaInP/InGaP quantum well lasers at 300 K
Author :
Susaki, W. ; Uetsuji, T. ; Nishikawa, K. ; Gao, X. ; Ohno, N. ; Yagi, T. ; Oomura, E.
Author_Institution :
Osaka Electro-Commun. Univ., Neyagawa, Japan
Abstract :
Efficient self-excited electron and phonon Raman scattering spectra are observed above threshold in 0.68μm-AlGaInP/InGaP quantum well lasers at room temperature. They are assigned to electron intersubband transitions between the first and the second subbands in the quantum well accompanied with longitudinal optical phonon scattering
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; semiconductor plasma; 0.68 micron; 300 K; AlGaInP-InGaP; AlGaInP/InGaP; Raman scattering spectra; electron intersubband transitions; electron-hole plasma; longitudinal optical phonon scattering; quantum well lasers; self-excited Raman scattering; Electron optics; Laser transitions; Optical scattering; Particle scattering; Phonons; Plasma temperature; Polarization; Quantum well lasers; Raman scattering; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location :
Stockholm
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014631
