Title :
Future of power semiconductors
Author :
Majumdar, Gourab
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A brief history of power semiconductor devices, starting from its bipolar based origin to the present day IGBT Modules and intelligent power modules (IPMs), has been reviewed in the beginning of this paper. The review is then followed by an analysis of the changing requirements from the application fields and a projection of future growth for power semiconductors to comply with such needs. The paper particularly details the progresses made for near future options related to the IGBT chip technology, including a ´reverse-conducting type´ and a ´reverse-blocking type´ device concepts, and prospects of silicon carbide based power semiconductors for far future power conversion applications.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; reviews; IGBT chip technology; IGBT modules; insulated gate bipolar transistors; intelligent power modules; power conversion applications; power semiconductor devices; reverse-blocking type; reverse-conducting type; silicon carbide; Bipolar transistors; History; Insulated gate bipolar transistors; MOSFETs; Power conversion; Power electronics; Power generation; Power semiconductor devices; Silicon carbide; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
Print_ISBN :
0-7803-8399-0
DOI :
10.1109/PESC.2004.1355704
