Study of process induced localized elevated oxygen concentration in strained boron doped sub-50 nm SiGeC base layers for high frequency npn HBTs

Author

Enicks, Darwin ; Oleszek, Gerald

Author_Institution

Atmel Corp., Colorado Springs, CO, USA

fYear

2005

fDate

9-11 May 2005

Firstpage

195

Lastpage

198

Abstract

This work is believed to be the first report of localized elevated oxygen concentration (or pileup), which occurs with thermal anneals of strained, boron doped SiGeC layers. The thermally activated oxygen updiffusion is directly correlated to concentrations of germanium, carbon, and boron. A strong dependency on prebake temperature was also found. SIMS (secondary ion mass spectrometry) measurements were made to verify O, C, B, and Ge concentrations in SiGeC layers following low temp growth by LPCVD (low pressure chemical vapor deposition) and also following thermal anneal.

Keywords

Ge-Si alloys; annealing; chemical vapour deposition; heterojunction bipolar transistors; oxidation; secondary ion mass spectroscopy; SiGeC; high frequency npn HBT; localized elevated oxygen concentration; low pressure chemical vapor deposition; prebake temperature; secondary ion mass spectrometry; thermal anneal; Annealing; Boron; Frequency; Germanium; Heterojunction bipolar transistors; Inductors; Oxygen; Silicon; Springs; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Print_ISBN

0-7803-9081-4

Type

conf

DOI

10.1109/ICICDT.2005.1502628

Filename

1502628