DocumentCode
1893795
Title
Single-metal gate multi-bridge-channel MOSFET (MBCFET) for CMOS application
Author
Sung-Young Lee ; Min-Sang Kim ; Eun-Jung Yoon ; Sung-Dae Suk ; Sung-min Kim
Author_Institution
Semicond. R & D Center, Samsung Electron. Co., Yonein, South Korea
fYear
2005
fDate
9-11 May 2005
Firstpage
199
Lastpage
202
Abstract
Simplifying the MBCFET process further, the authors have successfully fabricated single-metal-gate CMOS MBCFET. Due to channel engineering, the symmetric threshold voltage of 0.25V and -0.22V for single TiN-gate n-channel MBCFET (nMBCFET) and p-channel MBCFET (pMBCFET), could be achieved respectively.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit manufacture; titanium compounds; -0.22 V; 0.25 V; CMOS; TiN; channel engineering; single metal gate multibridge channel MOSFET; symmetric threshold voltage; CMOS process; Capacitance; Etching; Fabrication; Germanium silicon alloys; MOSFET circuits; Manufacturing processes; Silicon compounds; Silicon germanium; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN
0-7803-9081-4
Type
conf
DOI
10.1109/ICICDT.2005.1502629
Filename
1502629
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