DocumentCode
1893848
Title
Extraction and modeling of gate electrode resistance in rf MOSFETs
Author
Kang, Myounggon ; Kang, In Man ; Shin, Hyungcheol
Author_Institution
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., South Korea
fYear
2005
fDate
9-11 May 2005
Firstpage
207
Lastpage
210
Abstract
A simple and accurate method is presented for extraction of the effective gate resistance of rf MOSFETs. Analytical physical-based gate resistance model is developed in this paper. Extracted effective gate resistance is compared to measured data and verified with the model. The proposed gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers.
Keywords
CMOS integrated circuits; MOSFET; contact resistance; integrated circuit modelling; parameter estimation; RF MOSFET; bias dependency; gate electrode resistance extraction; gate electrode resistance modeling; CMOS technology; Data mining; Electric resistance; Electrical resistance measurement; Electrodes; Equivalent circuits; MOSFETs; Predictive models; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN
0-7803-9081-4
Type
conf
DOI
10.1109/ICICDT.2005.1502631
Filename
1502631
Link To Document