DocumentCode :
1894057
Title :
A transfer to industry of design for manufacturing technology
Author :
Sanders, T.J.
fYear :
1993
fDate :
18-19 May 1993
Firstpage :
51
Lastpage :
55
Abstract :
The results of a program conducted at Florida Institute of Technology to transfer design-for-manufacturing technology to the semiconductor industry are presented. Significant technical results have been achieved. The ability of the STADIUM methodology to predict the statistical variations of the NDMOS device drain to source on resistance (Rdson) are demonstrated. This modeling technique can be used to optimize the process as well as the product design
Keywords :
circuit CAD; integrated circuit manufacture; production engineering computing; semiconductor process modelling; statistical analysis; technology transfer; BiCMOS process; N-type diffused channel MOS power transistor; NDMOS device; STADIUM methodology; design for manufacturing technology; modeling technique; process optimisation; product design; semiconductor industry; statistical variations; technology transfer; Conductors; Design for manufacture; Electronics industry; Hardware; Integrated circuit technology; Manufacturing industries; Power transistors; Semiconductor device manufacture; Software packages; Technology transfer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location :
Research Triangle Park, NC
ISSN :
0749-6877
Print_ISBN :
0-7803-0990-1
Type :
conf
DOI :
10.1109/UGIM.1993.297038
Filename :
297038
Link To Document :
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