DocumentCode :
1894175
Title :
Commercialization of high 600V GaN-on-silicon power HEMTs and diodes
Author :
Parikh, P. ; YiFeng Wu ; Likun Shen
Author_Institution :
Transphorm Inc., Goleta, CA, USA
fYear :
2013
fDate :
21-23 May 2013
Firstpage :
1
Lastpage :
5
Abstract :
With power conversion losses endemic in all areas of electricity consumption, broadly categorized into motion control (accounting for around 50% of total electrical energy use), lighting, air conditioning, and information technology, consumers, governments and utilities are finding ways to achieve higher efficiency. Manufacturers of data servers, telecom systems, solar power inverters and drives for motor control are focused on reducing power conversion losses while simultaneously shrinking the size of power systems. Although silicon has historically been the base device material used by the power conversion industry, it is rapidly reaching its physical performance limits. GaN semiconductors solutions reduce power conversion loss by over 50% in a significantly smaller form factor and at a lower cost, when device design, fabrication technology and application design are holistically combined to deliver superior end products.
Keywords :
gallium compounds; power HEMT; power semiconductor diodes; wide band gap semiconductors; air conditioning; application design; base device material; consumers; data servers; device design; drives; electricity consumption; fabrication technology; gallium nitride-on-silicon power HEMT; gallium nitride-on-silicon power diode; governments; information technology; lighting; motion control; motor control; power conversion industry; power conversion loss reduction; solar power inverters; telecom systems; utilities; voltage 600 V; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Schottky diodes; Silicon; Standards; 600V GaN; GaN Diode; GaN HEMT; GaN Modules; GaN Qualification; Power Switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energytech, 2013 IEEE
Conference_Location :
Cleveland, OH
Type :
conf
DOI :
10.1109/EnergyTech.2013.6645300
Filename :
6645300
Link To Document :
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