Title :
Embedded DRAM technologies
Author :
Ishiuchi, H. ; Yoshida, T. ; Takato, H. ; Tomioka, K. ; Matsuo, K. ; Momose, H. ; Sawada, S. ; Yamazaki, K. ; Maeguchi, K.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Issues on embedded DRAM technologies including their applications, process options, and tradeoffs are discussed. Real implementations of the embedded DRAM technologies with 0.5 /spl mu/m, 0.35 /spl mu/m, and 0.25 /spl mu/m are also presented. The embedded DRAM technologies will be used to realize high bandwidth and low power operation.
Keywords :
DRAM chips; MOS logic circuits; MOS memory circuits; ULSI; integrated circuit technology; 0.25 to 0.5 micron; embedded DRAM technologies; high bandwidth operation; low power operation; Bandwidth; Capacitors; Costs; Logic arrays; Logic circuits; MOSFET circuits; Random access memory; Silicon compounds; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.649449
