Title :
Process and device simulation in designing thin film CMOS/SOI technology
Author :
Spencer, O.S. ; Seliskar, J. ; Wang, L.K. ; Haddad, N.F.
Author_Institution :
IBM Federal Sector Div., Manassas, VA, USA
Abstract :
The authors report on process modeling used FEDSS (Finite Element Diffusion Simulation System) together with device modeling using FIELDAY (FInite ELement Device AnalYsis) to analyze fully depleted thin film SOI (silicon-on-insulator) processes/devices. The FEDSS output after simulating drain implantation is presented, showing drain profile and polysilicon side wall oxides. Channel doping for both p- and n-type devices was p-type, and FEDSS modeling from process parameters found the device channel doping to be 8×1015/cm3, tailing off in the 100 Å gate surface 6×1015/cm 3 due to boron depletion. Measured results for the n-channel device were compared with the FIELDAY simulations. The difference between calculation and measurements increases for higher gate voltages. After the DC terminal characteristics were reconciled, the breakdown characteristics of the models were investigated
Keywords :
CMOS integrated circuits; electric breakdown of solids; finite element analysis; integrated circuit technology; semiconductor device models; semiconductor-insulator boundaries; simulation; thin film transistors; CMOS/SOI technology; DC terminal characteristics; FEA; FEDSS modeling; FEM; FIELDAY; Finite Element Diffusion Simulation System; SOI devices; SOI processes; Si; breakdown characteristics; device channel doping; device simulation; drain implantation; drain profile; finite element device analysis; n-channel device; polysilicon side wall oxides; process modeling; thin film; Analytical models; Boron; CMOS process; Doping; Finite element methods; Semiconductor device modeling; Semiconductor process modeling; Semiconductor thin films; Silicon on insulator technology; Thin film devices;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162867
