Title :
Design, optimization, and characterization of a low temperature RPECVD MOS gate stack process
Author :
Parker, Christopher G. ; Silvestre, Conrad ; Watkins, Mike ; Keuhn, R.T. ; Hauser, John R.
Author_Institution :
NSF Eng. Res. Center for Adv. Electron. Mater. Process., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Plasma-enhanced chemical vapor deposition (PECVD) allows film deposition in very short times and at low substrate temperatures. The use of remote plasma-enhanced chemical vapor deposition (RPECVD) to deposit an oxide insulator layer for a MOS gate stack structure within a single-wafer processing system is reported. The project background including government and industry support is presented. The design of the RPECVD chamber and optimization of deposition parameters are discussed. Characterization of the oxide quality through device testing is presented
Keywords :
insulated gate field effect transistors; integrated circuit technology; integrated circuit testing; plasma CVD; MOS gate stack structure; MOSFET; RPECVD chamber design; deposition parameters optimisation; device testing; film deposition; oxide quality characterisation; remote plasma-enhanced chemical vapor deposition; single-wafer processing system; substrate temperatures; Chemical vapor deposition; Design optimization; Government; Insulation; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Substrates; Testing;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location :
Research Triangle Park, NC
Print_ISBN :
0-7803-0990-1
DOI :
10.1109/UGIM.1993.297054
