Sensitive microwave detectors with two low barrier metal — Semiconductor contacts

Author

Shashkin, V.I. ; Vostokov, N.V.

Author_Institution

Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia

fYear

2012

fDate

10-14 Sept. 2012

Firstpage

599

Lastpage

600

Abstract

Characteristics of new sensitive microwave detectors with a symmetrical low-barrier structure metal-semiconductor-metal (MSM) are studied. Circuits for connection of detectors to microwave and low frequency registration tracts are discussed. Expressions for volt-watt sensitivity and noise equivalent power are obtained and comparisons with characteristics of zero-bias Schottky (Mott) detectors are performed. The characteristics of symmetric sensing elements are comparable and in some cases superior than the similar parameters of zero-bias detectors.

Keywords

Schottky barriers; electrical contacts; metal-semiconductor-metal structures; microwave detectors; Mott detectors; connection circuits; low-frequency registration tracts; microwave detectors; noise equivalent power; symmetric sensing elements; symmetrical low-barrier structure MSM; symmetrical low-barrier structure metal-semiconductor-metal contact; volt-watt sensitivity; zero-bias Schottky detectors; Detectors; Electronic mail; Microwave circuits; Microwave imaging; Noise; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

978-1-4673-1199-1

Type

conf

Filename

6336111