DocumentCode
1894492
Title
The Status of Semiconductor Device Modeling in the Classical Domain
Author
Marshak, A.H.
Author_Institution
Department of Electrical and Computer Engineering, Louisiana State University
fYear
1993
fDate
6-7 March 1993
Firstpage
15
Lastpage
15
Abstract
Summary form only given. Device simulation requires solving carrier transport equations and Poisson´s equation. Beginning with the Boltzmann transport equation (BTE), several options are available to describe carrier transport, including the drift-diffusion approach, the momentum and energy balance equations, and Monte Carlo simulation. The limitations of the BTE and the regions of validity for several device simulation approaches for Si and GaAs are reviewed. Results for situations close to equilibrium and for an arbitrary distribution function are given.
Keywords
Boltzmann equation; Computational modeling; Computer simulation; Distribution functions; Electrons; Gallium arsenide; Hot carrier effects; Photonic band gap; Poisson equations; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location
Taipei, Taiwan
Print_ISBN
0-7803-1225-2
Type
conf
DOI
10.1109/SMS.1993.664531
Filename
664531
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