Title :
Enhanced performance of PMOS and CMOS circuits using self-aligned MOSFETs with modulation doped Si-Ge channel
Author :
Gokhale, Milind ; Jain, Faquir ; Islam, Syed K.
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
Abstract :
The use of MOS gate Si-SiGe MODFETs to obtain performance enhancement in PMOS and CMOS integrated circuits is described. Device parameters are computed to obtain compatible transfer characteristics which make it possible to operate these MOS gate MODFETs in CMOS configurations. These transistors, potentially operating in the 10 to 60 GHz range, lead to design of high-performance CMOS logic and memory circuits at room temperature, and at 77 K
Keywords :
CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; high electron mobility transistors; insulated gate field effect transistors; integrated logic circuits; integrated memory circuits; silicon; 10 to 60 GHz; 77 K; CMOS integrated circuits; CMOS logic circuit design; MOS gate MODFET; PMOS integrated circuits; Si-SiGe; device parameters; memory circuits; modulation doped channel; self-aligned MOSFET; semiconductor; transfer characteristics; CMOS memory circuits; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFET circuits; MOSFETs; Silicon germanium; Substrates; Systems engineering and theory; Temperature distribution;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location :
Research Triangle Park, NC
Print_ISBN :
0-7803-0990-1
DOI :
10.1109/UGIM.1993.297056
