Enhanced performance of PMOS and CMOS circuits using self-aligned MOSFETs with modulation doped Si-Ge channel

Author

Gokhale, Milind ; Jain, Faquir ; Islam, Syed K.

Author_Institution

Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA

fYear

1993

fDate

18-19 May 1993

Firstpage

219

Lastpage

222

Abstract

The use of MOS gate Si-SiGe MODFETs to obtain performance enhancement in PMOS and CMOS integrated circuits is described. Device parameters are computed to obtain compatible transfer characteristics which make it possible to operate these MOS gate MODFETs in CMOS configurations. These transistors, potentially operating in the 10 to 60 GHz range, lead to design of high-performance CMOS logic and memory circuits at room temperature, and at 77 K

Keywords

CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; high electron mobility transistors; insulated gate field effect transistors; integrated logic circuits; integrated memory circuits; silicon; 10 to 60 GHz; 77 K; CMOS integrated circuits; CMOS logic circuit design; MOS gate MODFET; PMOS integrated circuits; Si-SiGe; device parameters; memory circuits; modulation doped channel; self-aligned MOSFET; semiconductor; transfer characteristics; CMOS memory circuits; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFET circuits; MOSFETs; Silicon germanium; Substrates; Systems engineering and theory; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial

Conference_Location

Research Triangle Park, NC

ISSN

0749-6877

Print_ISBN

0-7803-0990-1

Type

conf

DOI

10.1109/UGIM.1993.297056

Filename

297056