Title :
17 MeV to 200 MeV protons Irradiation to characterize CCD´s sensitivity to Single Event Transient
Author :
Germanicus, R. ; Rolland, G. ; Barde, S. ; Descamps, P. ; Dusseau, L. ; Calvel, P.
Author_Institution :
Philips Semicond., Caen
Abstract :
Experimental data obtained during irradiations of a COTS (commercial off the shelf) CCD are presented. Monoenergetic protons from 17 MeV to 200 MeV are used. We studied transient noise induced by the localized ionizing of the particle. The SET (single effect transient) is measured during irradiation. We report on the irradiation experiments. The evolution of the generated signal versus protons LET is linear.
Keywords :
charge-coupled devices; proton effects; semiconductor device noise; CCD sensitivity; commercial off the shelf CCD; electron volt energy 17 MeV to 200 MeV; localized particle ionization; protons irradiation; single event transient; transient noise; Aerospace industry; Charge coupled devices; Charge-coupled image sensors; Dark current; MOS devices; Protons; Semiconductor device noise; Signal generators; Silicon; Testing; Charge Coupled Device (CCD); LET; SET; dark current; protons;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365556
