DocumentCode :
1894543
Title :
Temperature control strategies for RTP systems
Author :
Yu, Seungil ; Sorrell, F.Yates ; Keither, William J.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
fYear :
1993
fDate :
18-19 May 1993
Firstpage :
229
Lastpage :
234
Abstract :
A simulation of rapid thermal processing (RTP) is made to investigate the accuracy of various control schemes. The simulated RTP process is chemical vapor deposition (CVD) of polycrystalline silicon over an oxide. The simulated control schemes are open loop control, pyrometer control, pyrometer control with corrected emissivity, and open loop control with the programmed lamp heating. Wafer temperature variation and final film thickness are predicted by the simulation. Based on these results, programmed open loop control is probably the best control scheme. An experiment confirms the results and shows reduced wafer temperature variation
Keywords :
chemical vapour deposition; incoherent light annealing; integrated circuit manufacture; programmed control; pyrometers; rapid thermal processing; semiconductor technology; temperature control; temperature measurement; CVD; chemical vapor deposition; corrected emissivity; film thickness; programmed lamp heating; programmed open loop control; pyrometer control; rapid thermal processing simulation; simulated RTP process; simulated control schemes; temperature control strategies; wafer temperature; Computational modeling; Electrical resistance measurement; Open loop systems; Optical films; Optical sensors; Rapid thermal processing; Semiconductor device modeling; Temperature control; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location :
Research Triangle Park, NC
ISSN :
0749-6877
Print_ISBN :
0-7803-0990-1
Type :
conf
DOI :
10.1109/UGIM.1993.297058
Filename :
297058
Link To Document :
بازگشت