Title :
Experimental Review of Si Commercial Devices Damage Sensitivity
Author :
David, J.P. ; Bezerra, F. ; Lorfèvre, E. ; Durand, R. ; Dargnies, T.
Author_Institution :
ONERA-DESP, Toulouse
Abstract :
Transistors and integrated circuits of silicon MOS and bipolar technologies have been evaluated under Co60 and proton total dose, and neutron fluence. All the device types, including a SDRAM, present a specific sensitivity to neutron and protons.
Keywords :
DRAM chips; MIS devices; SRAM chips; elemental semiconductors; neutron effects; proton effects; silicon; transistors; SDRAM; damage sensitivity; integrated circuits; neutron fluence; proton total dose; silicon MOS; silicon bipolar technologies; transistors; Bipolar integrated circuits; Bipolar transistor circuits; Degradation; Integrated circuit technology; MOS devices; MOSFETs; Neutrons; Protons; SDRAM; Silicon;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365563
