• DocumentCode
    1894688
  • Title

    Experimental Review of Si Commercial Devices Damage Sensitivity

  • Author

    David, J.P. ; Bezerra, F. ; Lorfèvre, E. ; Durand, R. ; Dargnies, T.

  • Author_Institution
    ONERA-DESP, Toulouse
  • fYear
    2005
  • fDate
    19-23 Sept. 2005
  • Abstract
    Transistors and integrated circuits of silicon MOS and bipolar technologies have been evaluated under Co60 and proton total dose, and neutron fluence. All the device types, including a SDRAM, present a specific sensitivity to neutron and protons.
  • Keywords
    DRAM chips; MIS devices; SRAM chips; elemental semiconductors; neutron effects; proton effects; silicon; transistors; SDRAM; damage sensitivity; integrated circuits; neutron fluence; proton total dose; silicon MOS; silicon bipolar technologies; transistors; Bipolar integrated circuits; Bipolar transistor circuits; Degradation; Integrated circuit technology; MOS devices; MOSFETs; Neutrons; Protons; SDRAM; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
  • Conference_Location
    Cap d´Agde
  • ISSN
    0379-6566
  • Print_ISBN
    978-0-7803-9502-2
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2005.4365563
  • Filename
    4365563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1894688