Title :
Latch-up prevention in insulated gate bipolar transistors
Author :
Nezar, Azzouz ; Mok, Philip K T ; Salama, C. André T
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages. The latch-up current for the trenched LIGBT is higher than that of a conventional LIGBT. The holding voltage exceeds the saturation voltage by far and allows the device to operate at high static power
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor technology; LIGBT; holding voltage; insulated gate bipolar transistors; latch-up capability; p-base resistance; p-well resistance; saturation voltage; shallow trench; static power; BiCMOS integrated circuits; Cathodes; Computational modeling; Conductivity; Contacts; Current density; Insulated gate bipolar transistors; Power integrated circuits; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297074
