Injection controllable Schottky barrier (ICOS) rectifier

Author

Kumagai, N. ; Yamazaki, T.

Author_Institution

Fuji Electric Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

188

Lastpage

192

Abstract

A novel power rectifier structure called the injection controllable Schottky barrier (ICOS) rectifier is proposed and studied by two-dimensional device simulation. The ICOS rectifier can operate in the bipolar mode to reduce the on-state voltage and can start operating in the unipolar mode just before the reverse-recovery stage to reduce the reverse-recovery current. For high-current-density application, it is found that complete unipolar operation for the ICOS rectifier requires fine pattern fabrication technology. The device can realize low on-state voltage and low reverse-recovery current. For higher current density, the ICOS rectifier can have a soft-recovery characteristic with low reserve-recovery current

Keywords

power electronics; semiconductor device models; solid-state rectifiers; ICOS rectifier; bipolar mode; injection controllable Schottky barrier; on-state voltage; pattern fabrication technology; power rectifier structure; reverse-recovery current; soft-recovery characteristic; two-dimensional device simulation; unipolar mode; Electrodes; Insulated gate bipolar transistors; Leakage current; Low voltage; MOSFETs; P-i-n diodes; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297082

Filename

297082