Title :
3D interconnection for ultra-dense multichip modules
Author :
Val, Christian ; Lemoine, Thierry
Author_Institution :
Thomson-CSF, Colombes, France
Abstract :
The increasing density of the interconnection of ASICs (application-specific integrated circuits) and memories is discussed. It is demonstrated that the interconnections of ASICs require the utilization of thin-film multilayers. However, since ASICs are interconnected in an extremely dense manner, the relative area occupied by the memories increases substantially, and currently amounts to approximately 50%. The 3-D interconnection technology allows reduction of the occupied area by a factor of 7 or 8 and thus yielded ultradense multichip modules. This interconnection approach consists of interconnecting the bare chips not in the xy plane but along the z axis. The interconnection process entails interconnecting the four sides of the cube formed by stacking n chips (n =8 by 10) on top of one another. To do so, the chips are individually interconnected on a thin film identical to a TAB (tape automated bonding) film by means of gold wires prior to cubing. This technique also substantially improves the high-frequency behavior of ICs. An application consisting of a cube of eight stacked 256-kb static random-access memories is being developed
Keywords :
SRAM chips; application specific integrated circuits; modules; packaging; tape automated bonding; 3D interconnection; ASICs; TAB; bare chips; cubing; high-frequency behavior; interconnection process; memories; stacking; static random-access memories; thin-film multilayers; ultra-dense multichip modules; Application specific integrated circuits; Bonding; Gold; Integrated circuit interconnections; Integrated circuit technology; Multichip modules; Nonhomogeneous media; Stacking; Thin film circuits; Transistors;
Conference_Titel :
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location :
Las Vegas, NV
DOI :
10.1109/ECTC.1990.122240