Title :
Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation
Author :
Shen, Z. ; Chow, T.P.
Author_Institution :
Dept. of Electr. & Comput. Sci. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters. The model has been implemented into the ContecSPICE circuit simulator. A systematic way of determining model parameters has also been developed. A 500-V/20-A commercial IGBT (Motorola MGP20N50) is fully characterized to verify the validity of the model. Good agreement has been obtained between simulation and measurement for both DC and transient cases
Keywords :
SPICE; digital simulation; insulated gate bipolar transistors; power transistors; semiconductor device models; 20 A; 500 V; ContecSPICE circuit simulator; DC operation; Motorola MGP20N50; SPICE simulation; insulated gate bipolar transistor; model parameters; power IGBTs; semiempirical CAD model; subcircuit representation; transient cases; Analytical models; Circuit simulation; Computational efficiency; Computational modeling; Design automation; Equations; Flexible printed circuits; Insulated gate bipolar transistors; Power system modeling; SPICE;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297086
