DocumentCode
1894964
Title
Dual gate MOS thyristor (DGMOT)
Author
Seki, Yasukazu ; Iwamuro, Noriyuki
Author_Institution
Fuji Electric Corp. R&D Ltd., Matsumoto, Japan
fYear
1993
fDate
18-20 May 1993
Firstpage
159
Lastpage
164
Abstract
A novel MOS-gated thyristor structure called the dual-gate MOS thyristor (DGMOT) is proposed. In this device the insulated-gate bipolar transistor (IGBT) mode turn-off is attained due to the integration of a lateral n-MOSFET with the thyristor structure, while the thyristor mode operation is achieved in the on-state. Consequently, the on-state voltage of the DGMOT is much lower than that of the IGBT with almost the same turn-off time. This result suggests that the DGMOT could be a superior alternative to the IGBT for a low-frequency circuit
Keywords
metal-insulator-semiconductor devices; thyristors; IGBT mode turn-off; MOS-gated thyristor structure; dual-gate MOS thyristor; lateral n-MOSFET; low-frequency circuit; on-state voltage; turn-off time; Anodes; Cathodes; Equivalent circuits; Frequency; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Research and development; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location
Monterey, CA
ISSN
1063-6854
Print_ISBN
0-7803-1313-5
Type
conf
DOI
10.1109/ISPSD.1993.297087
Filename
297087
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