Title :
Dual gate MOS thyristor (DGMOT)
Author :
Seki, Yasukazu ; Iwamuro, Noriyuki
Author_Institution :
Fuji Electric Corp. R&D Ltd., Matsumoto, Japan
Abstract :
A novel MOS-gated thyristor structure called the dual-gate MOS thyristor (DGMOT) is proposed. In this device the insulated-gate bipolar transistor (IGBT) mode turn-off is attained due to the integration of a lateral n-MOSFET with the thyristor structure, while the thyristor mode operation is achieved in the on-state. Consequently, the on-state voltage of the DGMOT is much lower than that of the IGBT with almost the same turn-off time. This result suggests that the DGMOT could be a superior alternative to the IGBT for a low-frequency circuit
Keywords :
metal-insulator-semiconductor devices; thyristors; IGBT mode turn-off; MOS-gated thyristor structure; dual-gate MOS thyristor; lateral n-MOSFET; low-frequency circuit; on-state voltage; turn-off time; Anodes; Cathodes; Equivalent circuits; Frequency; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Research and development; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297087
