Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET

We present a 3-D simulation study, supported by experimental results, which clarifies the role played by the parasitic BJT activation on the interaction between generated charge and electric field during ion impact in SEB/SEGR of power MOSFET. This activation is caused by the movement of the holes deposited during the ion impact and gives rise to a huge amount of charge that is sustained by avalanche multiplication. During SEGR phenomena this generated charge interact with the high electric field that is formed underneath the gate oxide thus causing damages to it. Whereas during SEB phenomena the generated charge causes a double injection phenomenon to take place that induces an electrical instability and, then, the MOSFET destruction.