Title :
Formation of straight-through pores in silicon substrates for 3-D metal interconnections
Author :
Lazarouk, S.K. ; Dolbik, A.V. ; Stepanova, L.I. ; Bodryh, T.I. ; Turtsevich, A.S. ; Shvedau, S.V. ; Labunov, V.A.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Silicon substrates with ordered pores, which go through the whole sample, have been fabricated for 3-D metal interconnections. The inter-pore distance can be ranged from 4 to 10 μm. The thickness of silicon substrate can reach up to 200-300 μm. The ordered porous structures are obtained by a photolithographic process.
Keywords :
interconnections; photolithography; silicon; 3D metal interconnections; Si; distance 4 mum to 10 mum; interpore distance; photolithographic process; silicon substrates; straight-through pores formation; Copper; Educational institutions; Electronic mail; Silicon; Substrates; Surface treatment;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
