Title :
Properties of the intermediate mesa structure in deformation methods of obtaining islands of nanostructured silicon
Author :
Kylinich, O.A. ; Eshtokina, T. ; Brusenskaya, G.I. ; Yatsunskyi, I.R. ; Marchuk, I.A. ; Glauberman, M.A.
Author_Institution :
Odessa Nat. Econ. Univ., Odessa, Ukraine
Abstract :
In this work on the basis of use of modern methods of researches in a combination with methods of chemical selective etching structure the surface layer of silicon consisted of area of polycrystalline silicon and area which contained dislocation grids was studied after oxidation and ion implantation. It is shown that dislocation grids can serve a basis for mesa structure creation in different deformation methods of obtaining nanostructured silicon.
Keywords :
boron; deformation; dislocation structure; elemental semiconductors; etching; ion implantation; island structure; nanomechanics; nanostructured materials; oxidation; semiconductor doping; silicon; Si:B; chemical selective etching structure; deformation; dislocation grids; intermediate mesa structure; ion implantation; nanostructured silicon islands; oxidation; polycrystalline silicon; surface layer; Educational institutions; Electronic mail; Etching; Ion implantation; Oxidation; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
