The IGBT with monolithic overvoltage protection circuit

Author

Yamazaki, Tomoyuki ; Seki, Yasukazu ; Hoshi, Yasuyuki ; Kumagai, Naoki

Author_Institution

Fuji Electric Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

41

Lastpage

45

Abstract

A novel IGBT (insulated-gate bipolar transistor) with a monolithic overvoltage protection circuit has been developed to obtain high resistance to overvoltage stress. This device is characterized by novel integration of an avalanche diode with an IGBT structure. The conventional IGBT process can be used to fabricate this device without any additional photomasks. Since it exhibits a large safe operating area, this device can be applied not only to a soft switching application like a voltage resonant circuit but also to a hard switching application like a snubberless inductive load circuit

Keywords

avalanche diodes; insulated gate bipolar transistors; overvoltage protection; power integrated circuits; power transistors; IGBT; avalanche diode; hard switching application; monolithic overvoltage protection circuit; snubberless inductive load circuit; soft switching application; voltage resonant circuit; Character generation; Cities and towns; Diodes; Equivalent circuits; Insulated gate bipolar transistors; Laboratories; Protection; RLC circuits; Research and development; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297104

Filename

297104