A comparison of the switching behavior of IGBT and MCT power devices

Author

Dettmer, H. ; Krumbein, U. ; Lendenmann, H. ; Müller, S. ; Fichtner, W. ; Bauer, F. ; Lilja, K. ; Stockmeier, T.

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1993

fDate

18-20 May 1993

Firstpage

54

Lastpage

59

Abstract

Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device simulation results show that the inherently faster-switching IGBT is much more affected by dynamic avalanche phenomena than the MCT. It is also shown that the avalanche-injected carriers can be removed by shorting the anode layer, resulting in a much higher turn-off performance for both devices. Because of the lower charge and therefore the higher dV/dt , the ionization rate is higher in the IGBT than in the MCT

Keywords

impact ionisation; insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor switches; switching; thyristors; IGBT; MOS-controlled thyristors; anode layer; device simulation; dynamic avalanche phenomena; high-voltage; ionization rate; shorting; turn-off curves; Anodes; Charge carrier processes; Circuits; Current density; Electric variables measurement; Insulated gate bipolar transistors; Ionization; Performance evaluation; Power measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297107

Filename

297107