DocumentCode :
1895336
Title :
Laser Mapping of SRAM sensitive cells. A way to obtain input parameters for DASIE calculation code
Author :
Miller, F. ; Buard, N. ; Hubert, G. ; Alestra, S. ; Baudrillard, G. ; Carrière, T. ; Gaillard, R. ; Palau, J.M. ; Saigné, F. ; Fouillat, A.
Author_Institution :
Eur. Aeronaut. Defence & Space Co., Suresnes
fYear :
2005
fDate :
19-23 Sept. 2005
Abstract :
This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order to predict the behaviour of sensitive components towards radiations.
Keywords :
Monte Carlo methods; SRAM chips; measurement by laser beam; DASIE calculation code; Monte Carlo calculation; SRAM sensitive cells; electronic devices; laser threshold mappings; Laser beams; National electric code; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
ISSN :
0379-6566
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2005.4365588
Filename :
4365588
Link To Document :
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