• DocumentCode
    1895367
  • Title

    Power MOSFET screening to improve field-reliability of power supplies

  • Author

    Shenai, Krishna

  • Author_Institution
    Energy Syst. Div., Argonne Nat. Lab., Argonne, IL, USA
  • fYear
    2013
  • fDate
    21-23 May 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The field-failures of a power converter depends on the reliability characteristics of circuit components, package and interconnect parasitics, thermal management and cooling, load characteristics, and the field operating environment, among other factors. In this paper, power supply field-reliability improvement by careful screening of power MOSFET´s is reported. A new power MOSFET screening criteria is proposed that leads to dramatic improvement in the mean-time-between-failure (MTBF) of compact computer/telecom power supplies. Using the new screening criteria, nearly an order of magnitude improvement in power supply MTBF is demonstrated.
  • Keywords
    power MOSFET; power convertors; semiconductor device reliability; semiconductor device testing; telecommunication power supplies; thermal management (packaging); cooling; field failures; field operating environment; interconnect parasitics; mean time between failure; power MOSFET screening; power converter; power supply MTBF; power supply field reliability improvement; telecommunication power supplies; thermal management; Integrated circuit reliability; MOSFET; Power semiconductor switches; Power supplies; Switching circuits; Power MOSFET; field-reliability; mean-time-between-failure (MTBF); power supply; screening;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energytech, 2013 IEEE
  • Conference_Location
    Cleveland, OH
  • Type

    conf

  • DOI
    10.1109/EnergyTech.2013.6645343
  • Filename
    6645343