Device parameter analysis for direct replacement of thyratrons with MAGTs

Author

Shinohe, Takashi ; Minami, Yoshihiro ; Sato, Shinji ; Ohashi, Hiromichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

77

Lastpage

81

Abstract

The possibility of replacing a thyratron directly with a MAGT (MOS-assisted gate-triggered thyristor) stack which consists of eight series-connected 4.5-kV MAGTs with built-in heat pipes is examined. This possibility has been verified by device parameter analysis based on experimental results. The analysis has shown that a MAGT stack with a size equivalent to that of a thyratron makes it possible to achieve maximum ratings (forward blocking voltage: 35 kV; peak current: 15 kA; di/dt immunity: 100 kA/μs) comparable to those of thyratrons and to reduce the turn-on power loss to as little as 100 W/cm ² at 5 kpps operation while retaining the long operating lifetime. These results indicate that direct replacement with the proposed MAGT stack model is an attainable target

Keywords

metal-insulator-semiconductor devices; semiconductor device models; semiconductor switches; thyristors; 15 kA; 35 kV; MOS-assisted gate-triggered thyristor; device parameter analysis; direct replacement; forward blocking voltage; long operating lifetime; maximum ratings; peak current; stack model; switching characteristics; thyratron replacement; turn-on power loss; Artificial intelligence; Cathodes; Electric variables; Electrodes; Fabrication; Packaging; Pulsed power supplies; Thyratrons; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297111

Filename

297111