DocumentCode
1895406
Title
Types of soft errors in DRAMs
Author
Schindlbeck, G.
Author_Institution
Infineon Technol., Munich
fYear
2005
fDate
19-23 Sept. 2005
Abstract
Soft errors in DRAMs exhibit at least 3 different characteristics depending on the circuits that caused them. Tests and reports on DRAM soft errors must take all types of soft errors into account, and not only those from cell hits. This is evidenced by neutron beam results which also reveal different multi-bit soft errors.
Keywords
DRAM chips; error statistics; neutron effects; DRAM; core cycle time; dynamic random access memory; multibit soft errors; neutron beam; Circuit testing; DRAM chips; Error analysis; Error correction; Ionizing radiation; Latches; Neutrons; Particle beams; Random access memory; Redundancy;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location
Cap d´Agde
ISSN
0379-6566
Print_ISBN
978-0-7803-9502-2
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2005.4365591
Filename
4365591
Link To Document