Novel substrate contact structure for high-Q silicon-integrated spiral inductors

Author

Burghartz, J.N. ; Ruehli, A.E. ; Jenkins, K.A. ; Soyuer, M. ; Nguyen-Ngoc, D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

55

Lastpage

58

Abstract

The general effects of a substrate contact near a spiral inductor on a silicon substrate are investigated. It is found that a string of substrate contacts enclosing the inductor can have beneficial or detrimental effects, depending if the inductor is configured as a one-port or a two-port structure. A 40% increase of the quality factor is found for an inductor in which the substrate contact is connected to ground. The general guidelines for an optimum inductor implementation in an integrated RF circuit are highlighted.

Keywords

Q-factor; UHF integrated circuits; electrical contacts; inductors; monolithic integrated circuits; silicon; Si; Si substrate; high-Q spiral inductors; integrated RF circuit; one-port structure; optimum inductor implementation; substrate contact structure; two-port structure; Capacitance; Coils; Contact resistance; Frequency; Guidelines; Inductors; Microelectronics; Q factor; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.649454

Filename

649454