DocumentCode :
1895528
Title :
Power Semiconductors: Status and Trends in Process/Device/Circuit CAD
Author :
Shenai, K.
Author_Institution :
General Electric Corporate R&D Center, NY
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
21
Lastpage :
21
Abstract :
Summary form only given. High-voitage semiconductor devices used in advanced power conditioning systems can be broadly catagorized into two classes: (1) low- and medium-power devices for applications below 200V (mostly power MOSFET´s) and (2) medium- and high-power dsvices used for applications upto several kilovolts (predominantly conductivity modulated power devices such as the IGBTs and MCTs). Unlike small-signal devices, power devices are fabrimtad using wafer processing at temperatures in excgss of 1 OOO*C, and henC8, process models must incorporate high-temperature diffusion physics.
Keywords :
Circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664535
Filename :
664535
Link To Document :
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