• DocumentCode
    1895577
  • Title

    Factors reducing the cutoff frequency of resonant-tunneling diode

  • Author

    Alkeyev, N.V. ; Averin, S.V. ; Dorofeyev, A.A. ; Gladysheva, N.B.

  • Author_Institution
    Fryazino Branch, Kotelnikov Inst. of Radio Eng. & Electron., Fryazino, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    709
  • Lastpage
    710
  • Abstract
    Cutoff frequency of resonant tunneling diodes (RTD´s) designed for operation in millimeter wave subharmonic mixers is analyzed and investigated. The delay of electrons in the RTD quantum well and localized electron states at heterointerfaces of RTD active layers are observed experimentally.
  • Keywords
    interface states; localised states; millimetre wave diodes; millimetre wave mixers; resonant tunnelling diodes; semiconductor quantum wells; RTD active layers; RTD quantum well; cutoff frequency; electron delays; heterointerfaces; localized electron states; millimeter wave subharmonic mixers; resonant-tunneling diode; Cutoff frequency; Delay; Gallium arsenide; Impedance; Semiconductor diodes; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1895577