Inactivity Windows and Leakage Currents in Irradiated CMOS Analog Switches

Author

Franco, F.J. ; Zong, Y. ; Agapito, J.A.

Author_Institution

Univ. Complutense de Madrid, Madrid

fYear

2005

fDate

19-23 Sept. 2005

Abstract

Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON & OFF states if the total radiation dose is placed between two characteristics values. Oddly, once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed. Besides, not only were observed the typical leakage currents but an unexpected dependence on the logic input value was found as well. A theory to explain this effect is also developed.

Keywords

CMOS analogue integrated circuits; MOSFET; leakage currents; radiation effects; semiconductor switches; CMOS analog switches; NMOS transistors; leakage currents; logic input value; off states; on states; threshold voltage; total radiation dose; Cryogenics; Large Hadron Collider; Leakage current; Life estimation; Logic devices; MOSFETs; Neutrons; Switches; Testing; Threshold voltage; Analog switches; CMOS devices; TID;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365599

Filename

4365599