DocumentCode :
1895590
Title :
Extremely high-Q tunable inductor for Si-based RF integrated circuit applications
Author :
Pehlke, D.R. ; Burstein, A. ; Chang, M.F.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fYear :
1997
fDate :
10-10 Dec. 1997
Firstpage :
63
Lastpage :
66
Abstract :
A novel tunable inductor with an extremely high Q is described. The inductor consists of coupled RF and drive coils, which employs phase shifting of the mutual components and demonstrates measured results of over 100% inductance tuning and a significant decrease in resistive losses resulting in a measured Q of about 2000.
Keywords :
CMOS integrated circuits; Q-factor; UHF integrated circuits; inductors; losses; silicon; thin film devices; tuning; Si; Si-based RF integrated circuit; UHF IC; coupled RF/drive coils; high-Q tunable inductor; mutual components; phase shifting; resistive losses reduction; Application specific integrated circuits; Coils; Geometry; Inductance; Mutual coupling; Q factor; Radio frequency; Radiofrequency integrated circuits; Thin film inductors; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4100-7
Type :
conf
DOI :
10.1109/IEDM.1997.649459
Filename :
649459
Link To Document :
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