Arsenide galium nanostructural diode with nonresonant tunneling

Author

Goncharuk, N.M. ; Karushkin, N.F.

Author_Institution

Res. Inst. Orion, Kiev, Ukraine

fYear

2012

fDate

10-14 Sept. 2012

Firstpage

717

Lastpage

718

Abstract

The low-signal impedance of a microwave diode on AlGaAs/GaAs nanostructure with electron tunnel injection through AlGaAs potential barrier and transit in GaAs drift layer is investigated. Frequency dependences of the impedance at width and height of a barrier layer of 2.5 nm and 0.3 eV is studied at different diode diameter and transit angle values. Maximal negative conductance of 192 mS is reached for the diode with both optimal diameter of 25 μm and transit angle of 1.1 π.

Keywords

III-V semiconductors; aluminium compounds; electric admittance; electric impedance; gallium arsenide; microwave diodes; nanostructured materials; tunnel diodes; tunnelling; AlGaAs-GaAs; arsenide gallium nanostructural diode; barrier layer; conductance 192 mS; drift layer; electron tunnel injection; electron volt energy 0.3 eV; frequency dependence; low-signal impedance; maximal negative conductance; microwave diode; nonresonant tunneling; size 2.5 nm; size 25 mum; transit angle value; Aluminum gallium nitride; Electronic mail; Gallium arsenide; Gallium nitride; Impedance; Microwave theory and techniques; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

978-1-4673-1199-1

Type

conf

Filename

6336160