Modelling of transfer processes in heterostructures with plasma waves at low temperatures

Presented in this paper is the research of basic scattering mechanisms in semiconductor heterostructures, as well as basic characteristics of transfer processes at space charge mode using statistical modeling technique. Outstanding feature of this method is statistic modeling and self-consistent solution of hydrodynamic model equation, that allowed us to define the basic physical mechanisms, that determine the raising of plasma waves expansion velocity and to determine the requirements for the choice of electrophysical parameters of heterostructures in order to obtain terahertz band oscillations.