DocumentCode
1895682
Title
Investigations of hot-carrier-induced breakdown of thin oxides
Author
Kamakura, Y. ; Utsunomiya, H. ; Tomita, T. ; Umeda, K. ; Taniguchi, K.
Author_Institution
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
81
Lastpage
84
Abstract
New oxide breakdown modes induced by hot carrier injection are presented. By using substrate hot electron and hot hole injection techniques, we demonstrate that the oxide damaged by hot carriers shows different breakdown characteristics compared with the case of conventional FN stress experiments. These new experiments reveal that the lifetime of oxide breakdown is not simply determined by the total number of injected holes.
Keywords
dielectric thin films; electric breakdown; hot carriers; hot-carrier-induced breakdown; lifetime; substrate hot electron injection; substrate hot hole injection; thin oxide; Breakdown voltage; Charge carrier processes; Design for quality; Electric breakdown; Hot carriers; Predictive models; Stress; Substrate hot electron injection; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.649469
Filename
649469
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