Title :
Investigations of hot-carrier-induced breakdown of thin oxides
Author :
Kamakura, Y. ; Utsunomiya, H. ; Tomita, T. ; Umeda, K. ; Taniguchi, K.
Author_Institution :
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
Abstract :
New oxide breakdown modes induced by hot carrier injection are presented. By using substrate hot electron and hot hole injection techniques, we demonstrate that the oxide damaged by hot carriers shows different breakdown characteristics compared with the case of conventional FN stress experiments. These new experiments reveal that the lifetime of oxide breakdown is not simply determined by the total number of injected holes.
Keywords :
dielectric thin films; electric breakdown; hot carriers; hot-carrier-induced breakdown; lifetime; substrate hot electron injection; substrate hot hole injection; thin oxide; Breakdown voltage; Charge carrier processes; Design for quality; Electric breakdown; Hot carriers; Predictive models; Stress; Substrate hot electron injection; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.649469
