Title :
Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Author :
Hayama, Kiyoteru ; Takakura, Kenichiro ; Ohyama, Hidenori ; Rafì, Joan Marc ; Mercha, Abdelkarim ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
Kumamoto Nat. Coll. of Technol., Nishigoshi
Abstract :
The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect.
Keywords :
MOSFET; electron beam effects; silicon-on-insulator; ELTRAN wafers; FD-SOI MOSFETs; UNIBOND wafers; electron irradiation; electron volt energy 2 MeV; floating body; front-back gate coupling; Current measurement; Degradation; Electrons; Immune system; Ionization; MOSFET circuits; Productivity; Scalability; Semiconductor films; Time measurement; ELTRAN; Electron irradiation; FD-SOI; MOSFET; UNIBOND;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365603
